Solid-state image sensing device and solid-state image sensing device application system

固体撮像装置および固体撮像装置応用システム

Abstract

PROBLEM TO BE SOLVED: To increase a photoelectric conversion gain in a unit cell to obtain the high sensitivity of a solid-state image sensing device and also to suppress bursting-in of noise from a vertical signal conductor or the like to make the realization of low noise possible. SOLUTION: Gate wirings 23 and 24 of first and second readout transistors and a drain 25 of the first readout transistor are formed between first and second diodes 21 and 22 on an element region 20. This drain 25 is connected with a gate 27 of an amplitude transistor via a jump wiring 26. Thus gate 27 of the amplitude transistor is connected also with a source 31, which is formed on an element region 30 of a reset transistor, of the reset transistor via the wiring 26. The source 31 and a drain 33 on the opposite side to the source 31 are formed holding a gate wiring 32 of the reset transistor between them on the region 30 of the above reset transistor.
(57)【要約】 【課題】単位セルでの光電変換ゲインを高くして高感度 を得ると共に、垂直信号線等からの雑音の飛び込みを抑 圧して低雑音を実現可能にすること。 【解決手段】素子領域20の第1及び第2のダイオード 21及び22の間に、第1、第2の読出しトランジスタ のゲート配線23、24と、第1の読出しトランジスタ のドレイン25が形成される。このドレイン25は、ジ ャンプ配線26を経て、増幅トランジスタのゲート27 に接続される。そして、この増幅トランジスタのゲート 27は、ジャンプ配線16を経て、リセットトランジス タの素子領域30上に形成されたリセットトランジスタ のソース31にも接続される。上記リセットトランジス タの素子領域30上には、リセットトランジスタのゲー ト配線32を挟んでソース31と反対側にドレイン33 が形成されている。

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