Solid-state image sensing device and solid-state image sensing device application system



PROBLEM TO BE SOLVED: To increase a photoelectric conversion gain in a unit cell to obtain the high sensitivity of a solid-state image sensing device and also to suppress bursting-in of noise from a vertical signal conductor or the like to make the realization of low noise possible. SOLUTION: Gate wirings 23 and 24 of first and second readout transistors and a drain 25 of the first readout transistor are formed between first and second diodes 21 and 22 on an element region 20. This drain 25 is connected with a gate 27 of an amplitude transistor via a jump wiring 26. Thus gate 27 of the amplitude transistor is connected also with a source 31, which is formed on an element region 30 of a reset transistor, of the reset transistor via the wiring 26. The source 31 and a drain 33 on the opposite side to the source 31 are formed holding a gate wiring 32 of the reset transistor between them on the region 30 of the above reset transistor.
(57)【要約】 【課題】単位セルでの光電変換ゲインを高くして高感度 を得ると共に、垂直信号線等からの雑音の飛び込みを抑 圧して低雑音を実現可能にすること。 【解決手段】素子領域20の第1及び第2のダイオード 21及び22の間に、第1、第2の読出しトランジスタ のゲート配線23、24と、第1の読出しトランジスタ のドレイン25が形成される。このドレイン25は、ジ ャンプ配線26を経て、増幅トランジスタのゲート27 に接続される。そして、この増幅トランジスタのゲート 27は、ジャンプ配線16を経て、リセットトランジス タの素子領域30上に形成されたリセットトランジスタ のソース31にも接続される。上記リセットトランジス タの素子領域30上には、リセットトランジスタのゲー ト配線32を挟んでソース31と反対側にドレイン33 が形成されている。




Download Full PDF Version (Non-Commercial Use)

Patent Citations (0)

    Publication numberPublication dateAssigneeTitle

NO-Patent Citations (0)


Cited By (26)

    Publication numberPublication dateAssigneeTitle
    EP-1592066-A2November 02, 2005Fujitsu LimitedSolid-state image sensor
    EP-1976014-A2October 01, 2008Fujitsu LimitedCMOS-Bildgebungsvorrichtung
    EP-2343738-A1July 13, 2011Canon Kabushiki KaishaSolid state image pickup apparatus and image pickup system with the solid state image pickup apparatus
    EP-2546878-A2January 16, 2013Canon Kabushiki KaishaFestkörper-Bildaufnahmevorrichtung und Bildaufnahmesystem mit der Festkörper-Bildaufnahmevorrichtung
    JP-2006014344-AJanuary 12, 2006Canon Inc, キヤノン株式会社撮像装置及び撮像システム
    JP-2006253316-ASeptember 21, 2006Sony Corp, ソニー株式会社Solid-state image sensing device
    JP-2006512153-AApril 13, 2006モトローラ・インコーポレイテッドMotorola Incorporated凹凸検出のための方法及び装置
    JP-2013247182-ADecember 09, 2013Canon Inc, キヤノン株式会社光電変換装置
    US-6570222-B2May 27, 2003Kabushiki Kaisha ToshibaSolid state imaging device having a photodiode and a MOSFET
    US-6617625-B2September 09, 2003Kabushiki Kaisha ToshibaSolid state imager
    US-6642087-B2November 04, 2003Kabushiki Kaisha ToshibaSolid state imaging device having a photodiode and a MOSFET and method of manufacturing the same
    US-6649948-B2November 18, 2003Kabushiki Kaisha ToshibaSolid-state image sensor of a MOS structure
    US-6946636-B2September 20, 2005Canon Kabushiki KaishaImage pickup apparatus providing a bias between different pixel areas during signal accumulation
    US-6982759-B2January 03, 2006Kabushiki Kaisha ToshibaAmplification type solid-state imaging device having a potential detecting circuit for each unit cell and high-speed readout method thereof
    US-7187052-B2March 06, 2007Canon Kabushiki KaishaPhotoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus
    US-7531885-B2May 12, 2009Canon Kabushiki KaishaPhotoelectric conversion apparatus and image pick-up system using the photoelectric conversion apparatus
    US-7557846-B2July 07, 2009Fujitsu Microelectronics LimitedSolid-state image sensor including common transistors between pixels
    US-7557847-B2July 07, 2009Canon Kabushiki KaishaImage pickup apparatus and system with low parasitic capacitance between floating diffusion area of a pixel and output line of an adjacent pixel
    US-7602434-B2October 13, 2009Panasonic CorporationSolid-state imaging device
    US-7872218-B2January 18, 2011Canon Kabushiki KaishaRadiation image pickup apparatus and its control method
    US-7990453-B2August 02, 2011Kabushiki Kaisha ToshibaSolid-state image sensor and signal processing method thereof
    US-8507961-B2August 13, 2013Sony CorporationSolid-state imaging device
    US-8525896-B2September 03, 2013Canon Kabushiki KaishaSolid-state imaging apparatus
    US-8610177-B2December 17, 2013Fujitsu Semiconductor LimitedCMOS imaging device having U-shaped device isolation regions
    US-8895382-B2November 25, 2014Sony CorporationSolid-state imaging device
    US-9196649-B2November 24, 2015Sony CorporationSolid-state imaging device